Workshops and Short Courses

One of most overlooked challenges in metrology is the microwave characterization of nanoscale materials and components. New electrical measurement methodologies and analyses are required to characterize the behavior of these new emerging materials and devices. Indeed, HF Instruments and methodologies are confronted with major limitations in terms of accuracy with respect to nanodevices. The main causes are related to the dimensional and electrical mismatches comparing to the current equipment. The impedances of nanodevices reach several KΩ which is too far, compared to the 50 ohms normalized impedance. Moreover, test structures generate too important parasites as compared to the intrinsic values. In this context, the workshop will present different characterization methods with or without contacts developed to characterize the nanodevices. All the brand new techniques for microwave characterization combining GSG micro-probes, non-contact probing, and SMM will be presented. Programme 14:20 14:30 Welcome 14:30 15:00 Scanning Probe Microscopy for Nanotechnology: from Microwaves to Infrared imaging Marco Farina, Università Politecnica delle Marche, Ancona, Italy  Abstract 15:00 15:30 Quantitative Evaluation of nanometer-scale electrical properties by microwave AFM Yang Ju, Nagoya University, Japan  Abstract 15:30 16:00 Design, fabrication and characterization of micro machined microwave probes for on-wafer testing of microelectronics Gilles Dambrine, IEMN University of Lille, France  Abstract 16:00 16:30 Coffee Break 16:30 17:00 Recent advances in scanning microwave microscopy: complex impedance, bioand subsurface imaging Ferry Kienberger, Keysight Technologies Austria, Austria  Abstract 17:00 17:30 Time and Frequency Domain Characterization of Buried Microand Nano-Inclusions by means of Transmission Microwave Microscopy Romolo Marcelli, CNR-IMM Roma, Italy  Abstract 17:30 18:00 Mid-infrared/THz near-field nanoscopy of organic and inorganic samples Jean Francois Lampin, IEMN University of Lille, France  Abstract 18:00 18:10 Discussion WORKSHOPS AND SHORT COURSES 14:30 15:00 Scanning Probe Microscopy for Nanotechnology: from Microwaves to Infrared imaging Marco Farina, Università Politecnica delle Marche, Ancona, Italy Abstract Scanning Probe Microscopy relies on the use of short-range interactions between a probe and a sample, the probe being raster scanned near the surface of a sample (or vice-versa). The nature of the interaction defines the type of microscope. Aim of this presentation is to introduce the latest developments on two completely different approaches exploiting electromagnetic waves. The first one exploits the near-field in the microwave and millimetre wave range, while the second one makes use of an optical Fabry-Perot microcavity to achieve a lens-free infrared tomography. While the near field microwave microscope allows to achieve nanometric resolution, the infrared imaging directly produces tomographic information, and both are minimally or non-invasive. 15:00 15:30 Quantitative Evaluation of nanometer-scale electrical properties by microwave AFM Yang Ju, Nagoya University, Japan Abstract In this presentation, we report a noncontact and quantitative method of evaluating and characterizing electrical properties with a nanometer-scale spatial resolution. Microwave atomic force microscopy (M-AFM) was used to obtain the topography and microwave image of materials in one scanning process simultaneously. Moreover, based on the analytical and explicit expressions proposed, M-AFM implemented the quantitative evaluation and characterization of the local conductivity of materials on the nanometer scale. An undoped GaAs wafer was used as the substrate of the M-AFM probe to restrict the attenuation of microwaves in it. To obtain the desired structure, wet etching was used to fabricate the M-AFM probe. To make the microwave signals propagate well in the probe, two Au films were deposited on the top and bottom surfaces of the probe by electron beam evaporation to form a parallel-plate waveguide. Finally, a nanoslit at the tip of the probe was fabricated by a focused ion beam process, from which the microwave emits and interacts with the material under the tip. 15:30 16:00 Design, fabrication and characterization of micro machined microwave probes for on-wafer testing of microelectronics Gilles Dambrine, IEMN University of Lille, France Abstract On-wafer characterization in Nano electronics and emerging technologies in high frequency faces with two major mismatches between nano-devices and measurement tools. The first one is a dimensional mismatch between nanometer size of devices and tens of micrometers of GSG embedded test structures inducing large parasitic while the second is the electrical mismatch between 50Ω impedance of HF set-up and tens of kΩ for nano-devices. To overcome these two main issues, HF nanoprober constituted of SEM, nano-manipulators and a new class of fine pitch HF probes will be presented. The fabrication details and DC and HF performance of such micro-probes will be presented. Examples of calibrated S-parameters of nanodevices in the microwave range will be presented and discussed. 16:30 17:00 Recent advances in scanning microwave microscopy: complex impedance, bioand subsurface imaging Ferry Kienberger, Keysight Technologies Austria, Austria Abstract The Keysight Scanning Microwave Microscope (SMM) consists of an AFM interfaced with a vector network analyzer allowing to measure complex materials properties for nano-electronics, materials science, and life science applications with operating frequencies of 1-20 GHz. We present a novel calibration workflow for complex impedance imaging and dielectric quantification. Calibrated subsurface and non-contact capacitance imaging of silicon samples is presented and dopant areas can still be detected under a 400 nm thick silicon oxide layer. The sub-surface measurement capabilities are demonstrated for silicon back-wafer imaging and semiconductor failure analysis. Liquid SMM imaging is demonstrated on the newly released 7500 SMM for electrochemical and biological applications including life cell imaging. 3D EMPro finite element modeling complements the experimental SMM investigations. 17:00 17:30 Time and Frequency Domain Characterization of Buried Microand Nano-Inclusions by means of Transmission Microwave Microscopy Romolo Marcelli, CNR-IMM Roma, Italy Abstract Time domain measurements are well known in various fields for obtaining a number of information about multilayer properties, such as thickness or dielectric constant of the individual layers. By means of state-of-art high frequency instruments, ranging from Far Infra-Red (FIR) to THz and beyond, reflection measurements are usually performed to obtain dimensional data and shape of hidden details using time-of-flight or phase, and material properties are measured looking to the frequency domain characterization searching for absorption peaks specific of the investigated materials. For the above reasons, delay time and phase measurements are useful for imaging whereas frequency domain is more useful for spectroscopic purposes. Presently, there is an increased interest in the microwave, millimeter and THz waves for sub-surface non-destructive characterization of devices as well as of biological and cultural heritage specimens. In this contribution, time and frequency domain characterization techniques in the microwave range both in reflection and in transmission will be discussed, and sensitivity analysis will be performed for the detection of buried microand nanosized details. 17:30 18:00 Mid-infrared/THz near-field nanoscopy of organic and inorganic samples Jean Francois Lampin, IEMN University of Lille, France Abstract Far-field imaging in the mid-infrared (MIR)/ THz range is limited by the diffraction to 5-500 μm resolution. Nevertheless it is interesting to investigate nanostructures and nano-objects in this particular frequency range because of strong interactions between matter and electromagnetic waves: phonons, plasmons, intersubband transitions, and more generally free-carriers and dipoles. Near-field nanoscopy is a new technique that allows to extract informations at the nanoscale using the scattering properties of a scanning tip: it is often called scattering scanning near-field optical microscopy (s-SNOM). After a presentation of the technique, we will show electromagnetic simulations and various images obtained in various cases showing the specific advantages of this imaging technique.